𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A new parameter extraction technique for small-signal equivalent circuit of polysilicon emitter bipolar transistors

✍ Scribed by Seonghearn Lee; Ryum, B.R.; Sang Won Kang

Book ID
114535642
Publisher
IEEE
Year
1994
Tongue
English
Weight
589 KB
Volume
41
Category
Article
ISSN
0018-9383

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A method to simultaneously extract the s
A method to simultaneously extract the small-signal equivalent circuit and noise parameters of heterojunction bipolar transistors
✍ Ma. Carmen Maya; Antonio Lázaro; Lluís Pradell 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 351 KB 👁 1 views

## Abstract A method to extract the elements of the small‐signal equivalent circuit and the noise parameters (NPs) of heterojunction bipolar transistors (HBTs) is presented. The extraction is done by simultaneous fitting of the measured __S__‐parameters, noise figure (for a well‐matched impedance),

Parameter extraction of a base-collector
Parameter extraction of a base-collector equivalent circuit model for SiGe heterojunction bipolar transistors
✍ Seonghearn Lee 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 107 KB

## Abstract By deriving new __Z__‐parameter equations, accurate extraction is performed to determine all base‐collector model parameters in a SiGe heterojunction bipolar transistor (HBT) equivalent circuit directly from measured __S__ parameters, without any test structure and geometric calculation

Direct extraction technique for a small-
Direct extraction technique for a small-signal MOSFET equivalent circuit with substrate parameters
✍ Seonghearn Lee 📂 Article 📅 2003 🏛 John Wiley and Sons 🌐 English ⚖ 111 KB 👁 1 views

## Abstract A simple and efficient method to extract model parameters of a small‐signal MOSFET equivalent circuit, including substrate resistance and capacitance, is proposed. Unlike previous methods, substrate parameters, resistances, and inductances are directly determined without any curve‐fitti