In this paper, we present the unique features exhibited by a novel double gate MOSFET in which the front gate consists of two side gates as an extension of the source/drain. The asymmetrical side gates are used to induce extremely shallow source/drain regions on either side of the main gate. Using t
โฆ LIBER โฆ
A new recessed gate MOSFET structure with the graded source/drain
โ Scribed by Lee, W.-H.; Park, Y.-J.; Lee, J.D.
- Book ID
- 114535272
- Publisher
- IEEE
- Year
- 1993
- Tongue
- English
- Weight
- 272 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0018-9383
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