A Physical Model for Fringe Capacitance in Double-Gate MOSFETs With Non-Abrupt Source/Drain Junctions and Gate Underlap

✍ Scribed by Agrawal, S.; Fossum, J.G.

• Book ID: 114619957
• Publisher: IEEE
• Year: 2010
• Tongue: English
• Weight: 661 KB
• Volume: 57
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2010.2044266