Source-to-drain breakdown voltage improvement in ultrathin-film SOI MOSFET's using a gate-overlapped LDD structure

✍ Scribed by Yamaguchi, Y.; Iwamatsu, T.; Joachim, H.-O.; Oda, H.; Inoue, Y.; Nishimura, T.; Tsukamoto, K.

• Book ID: 118690028
• Publisher: IEEE
• Year: 1994
• Tongue: English
• Weight: 603 KB
• Volume: 41
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.293351