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A new cell structure with a spread source/drain (SSD) MOSFET and a cylindrical capacitor for 64-Mb DRAM's
✍ Scribed by Yamada, T.; Samata, S.; Takato, H.; Matsushita, Y.; Hieda, K.; Nitayama, A.; Horiguchi, F.; Masuoka, F.
- Book ID
- 114538924
- Publisher
- IEEE
- Year
- 1991
- Tongue
- English
- Weight
- 737 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0018-9383
- DOI
- 10.1109/16.97412
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