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A new optical temperature measurement technique for semiconductor substrates in molecular beam epitaxy

✍ Scribed by Weilmeier, M. K.; Colbow, K. M.; Tiedje, T.; Buuren, T. Van; Xu, Li


Book ID
120043155
Publisher
NRC Research Press
Year
1991
Tongue
English
Weight
347 KB
Volume
69
Category
Article
ISSN
0008-4204

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We have grown BaSi 2 films on transparent CaF 2 (111) substrates by molecular beam epitaxy using Si template layers. The crystalline quality of the Si layers on the CaF 2 (111) was improved by electron stimulated desorption (ESD) technique prior to the deposition of Si. We successfully formed highly