Fabrication of BaSi2 films on transparent CaF2 (111) substrates by molecular beam epitaxy for optical characterization

✍ Scribed by K. Toh; T. Saito; M. Ajmal Khan; A. Okada; N. Usami; T. Suemasu

• Publisher: Elsevier
• Year: 2011
• Tongue: English
• Weight: 425 KB
• Volume: 11
• Category: Article
• ISSN: 1875-3892
• DOI: 10.1016/j.phpro.2011.01.050

✦ Synopsis

We have grown BaSi 2 films on transparent CaF 2 (111) substrates by molecular beam epitaxy using Si template layers. The crystalline quality of the Si layers on the CaF 2 (111) was improved by electron stimulated desorption (ESD) technique prior to the deposition of Si. We successfully formed highly-oriented Si films on the ESD-treated CaF 2 (111) surface at 650 C. The RHEED pattern suggested that the two kinds of <111>-oriented Si epitaxial variants known as type A and type B were formed on the CaF 2 (111) substrates. The BaSi 2 films were grown on the Si layers formed on CaF 2 (111) substrates, but they were not a-axis oriented, probably due to the rough surface of the Si layers.