✦ LIBER ✦

A new model of gate capacitance as a simple tool to extract MOS parameters

✍ Scribed by Larcher, L.; Pavan, P.; Pellizzer, F.; Ghidini, G.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A Simple Charge-Based Model for MOS Tran

✍ Serhan, G.I.; Swei-Yam Yu 📂 Article 📅 1983 🏛 IEEE 🌐 English ⚖ 537 KB

A Program for Device Model Parameter Ext

✍ Fei Li; Register, L.F.; Hasan, M.M.; Banerjee, S.K. 📂 Article 📅 2006 🏛 IEEE 🌐 English ⚖ 647 KB

A Unified Model for Gate Capacitance–Vol

✍ Bindu, B..; DasGupta, N..; DasGupta, A.. 📂 Article 📅 2007 🏛 IEEE 🌐 English ⚖ 199 KB

A new method of threshold voltage extrac

✍ Lau, M.M.; Chiang, C.Y.T.; Yeow, Y.T.; Yao, Z.Q. 📂 Article 📅 2001 🏛 IEEE 🌐 English ⚖ 106 KB

Small-signal gate-to-drain capacitance o

✍ R. Ghodsi; Y.T. Yeow 📂 Article 📅 1997 🏛 Elsevier Science 🌐 English ⚖ 535 KB

Capacitance measurements as a new tool t

✍ Mantovani, S. ;del Pennino, U. ;Mazzega, E. 📂 Article 📅 1976 🏛 John Wiley and Sons 🌐 English ⚖ 414 KB