A Unified Model for Gate Capacitance–Voltage Characteristics and Extraction of Parameters of Si/SiGe Heterostructure pMOSFETs

✍ Scribed by Bindu, B..; DasGupta, N..; DasGupta, A..

• Book ID: 114618806
• Publisher: IEEE
• Year: 2007
• Tongue: English
• Weight: 199 KB
• Volume: 54
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2007.900013