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A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs

✍ Scribed by Feilong Liu; Jian Zhang; Frank He; Feng Liu; Lining Zhang; Mansun Chan


Book ID
108271707
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
285 KB
Volume
53
Category
Article
ISSN
0038-1101

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