A new general procedure to extract the noise parameters of microwave gaAs mesfets
β Scribed by Armenise, Mario Nicola ;Perri, Anna Gina
- Book ID
- 112089526
- Publisher
- John Wiley and Sons
- Year
- 1991
- Tongue
- English
- Weight
- 360 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1124-318X
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A complete extraction procedure able to determine MES-FET and HEMT nonlinear model parameters starting from standard dc and S-parameter measured data is presented. The procedure has been checked on different P-HEMTs, and a¨erage errors lower than 10% ha¨e been found for the static output characteris
Criteria to obtain an accurate multiple-bias linear model for MESFET and HEMT de¨ices are proposed. Based on these criteria, an automatic extraction procedure to identify model parameters has been de¨eloped. The extraction procedure has been successfully checked on HEMT de¨ices in GaAs and InP techn