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A new method for calculating the noise parameters of MESFET's and TEGFET's

✍ Scribed by A. Cappy; M. Schortgen; G. Salmer


Book ID
126740091
Publisher
IEEE
Year
1985
Tongue
English
Weight
246 KB
Volume
6
Category
Article
ISSN
0741-3106

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A new method for the measurement and ana
✍ Nishida, Masao ;Uda, Hisanori ;Harada, Yasoo πŸ“‚ Article πŸ“… 1993 πŸ› John Wiley and Sons 🌐 English βš– 610 KB

## Abstract We have developed a new method to measure noise parameters for GaAs MESFETs and HEMTs more accurately, quickly, and reproducibly than the conventional method. We also devised an improved method for automatically calculating a gate‐induced noise current, a drain‐noise current, and their