A new method for the measurement and ana
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Nishida, Masao ;Uda, Hisanori ;Harada, Yasoo
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Article
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1993
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John Wiley and Sons
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English
β 610 KB
## Abstract We have developed a new method to measure noise parameters for GaAs MESFETs and HEMTs more accurately, quickly, and reproducibly than the conventional method. We also devised an improved method for automatically calculating a gateβinduced noise current, a drainβnoise current, and their