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A New Degradation Mechanism in High-Voltage SiC Power MOSFETs

✍ Scribed by Agarwal, A.; Fatima, H.; Haney, S.; Sei-Hyung Ryu

Book ID: 111952160
Publisher: IEEE
Year: 2007
Tongue: English
Weight: 92 KB
Volume: 28
Category: Article
ISSN: 0741-3106
DOI: 10.1109/led.2007.897861

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