New trench gate power MOSFET with high breakdown voltage and reduced on-resistance using a SiGe zone in drift region

✍ Scribed by Mahsa Mehrad; Ali A. Orouji

• Book ID: 113514311
• Publisher: Elsevier Science
• Year: 2012
• Tongue: English
• Weight: 611 KB
• Volume: 12
• Category: Article
• ISSN: 1567-1739
• DOI: 10.1016/j.cap.2012.03.023