A New Approach for SOI Devices Small-Signal Parameters Extraction
β Scribed by A. Bracale; V. Ferlet-Cavrois; N. Fel; D. Pasquet; J. L. Gautier; J. L. Pelloie; J. du Port de Poncharra
- Book ID
- 110262284
- Publisher
- Springer
- Year
- 2000
- Tongue
- English
- Weight
- 278 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0925-1030
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π SIMILAR VOLUMES
An extraction technique to determine the small-signal HBT equi¨alent circuit is presented. Some of the extrinsic element ¨alues are extracted by using an analytical approach, while the remaining ones are calculated adopting a statistical method. All of the model elements are uniquely determined. Sat
## Abstract An improved padβdeembedding technique for InGaP/GaAs HBT reducing uncertainty in measurement and equivalent circuit is proposed. Intrinsic elements are obtained by iteratively determining the external and internal base resistance. The extracted equivalent circuits demonstrate good agree