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A novel approach to extracting small-signal model parameters of silicon MOSFET's

✍ Scribed by Lee, S.; Yu, H.K.; Kim, C.S.; Koo, J.G.; Nam, K.S.

Book ID
118129403
Publisher
IEEE
Year
1997
Tongue
English
Weight
115 KB
Volume
7
Category
Article
ISSN
1051-8207

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An extraction technique to determine the small-signal HBT equi¨alent circuit is presented. Some of the extrinsic element ¨alues are extracted by using an analytical approach, while the remaining ones are calculated adopting a statistical method. All of the model elements are uniquely determined. Sat