## Abstract A simple and efficient method to extract model parameters of a smallβsignal MOSFET equivalent circuit, including substrate resistance and capacitance, is proposed. Unlike previous methods, substrate parameters, resistances, and inductances are directly determined without any curveβfitti
β¦ LIBER β¦
Direct extraction of the series equivalent circuit parameters for the small-signal model of SOI MOSFETs
β Scribed by Raskin, J.P.; Dambrine, G.; Gillon, R.
- Book ID
- 118119308
- Publisher
- IEEE
- Year
- 1997
- Tongue
- English
- Weight
- 114 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1051-8207
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