✦ LIBER ✦

Direct extraction of the AlGaAs/GaAs heterojunction bipolar transistor small-signal equivalent circuit

✍ Scribed by Costa, D.; Liu, W.U.; Harris, J.S., Jr.

Book ID: 114538118
Publisher: IEEE
Year: 1991
Tongue: English
Weight: 532 KB
Volume: 38
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.83724

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Extraction of the InP/GaInAs heterojunct

Extraction of the InP/GaInAs heterojunction bipolar transistor small-signal equivalent circuit

✍ Spiegel, S.J.; Ritter, D.; Hamm, R.A.; Feygenson, A.; Smith, P.R. 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 474 KB

Direct extraction technique of π-topolog

Direct extraction technique of π-topology small-signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor

✍ H. Taher 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 517 KB

A physical, yet simple, small-signal equ

A physical, yet simple, small-signal equivalent circuit for the heterojunction bipolar transistor

✍ Gobert, Y.; Tasker, P.J.; Bachem, K.H. 📂 Article 📅 1997 🏛 IEEE 🌐 English ⚖ 203 KB

A direct parameter-extraction method for

A direct parameter-extraction method for GaInP/GaAs heterojunction bipolar transistors small-signal model

✍ Shi Xin-zhi; Liu Hai-wen; Sun Xiao-wei; Che Yan-feng; Cheng Zhi-qun; Li Zheng-fa 📂 Article 📅 2005 🏛 Wuhan University 🌐 English ⚖ 433 KB

A small-signal equivalent circuit for th

A small-signal equivalent circuit for the collector-up InGaAs/InAlAs/InP heterojunction bipolar transistor

✍ Meskoob, B.; Prasad, S.; Vai, M.; Fonstad, C.G.; Vlcek, J.C.; Sato, H.; Bulutay, 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 399 KB

A method to simultaneously extract the s

A method to simultaneously extract the small-signal equivalent circuit and noise parameters of heterojunction bipolar transistors

✍ Ma. Carmen Maya; Antonio Lázaro; Lluís Pradell 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 351 KB 👁 1 views

## Abstract A method to extract the elements of the small‐signal equivalent circuit and the noise parameters (NPs) of heterojunction bipolar transistors (HBTs) is presented. The extraction is done by simultaneous fitting of the measured __S__‐parameters, noise figure (for a well‐matched impedance),