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A model for oxygen precipitation in Czochralski silicon during crystal growth

✍ Scribed by Sumio Kobayashi

Book ID: 108342416
Publisher: Elsevier Science
Year: 1997
Tongue: English
Weight: 425 KB
Volume: 174
Category: Article
ISSN: 0022-0248
DOI: 10.1016/s0022-0248(96)01099-8

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