design of multiband antennas using a single radiator. The theoretical prediction of antenna resonances can be achieved based on an effective medium model. Theoretical results have been verified via numerical simulations and measurements, which are all in good agreement. Further works include the imp
A low-voltage 5.4 GHZ monolithic cascode LNA using 0.18 um CMOS technology
✍ Scribed by Baohong Liu; Junfa Mao
- Book ID
- 102517549
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 191 KB
- Volume
- 53
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
Abstract
This article presents a low‐voltage monolithic cascode LNA using 0.18‐um CMOS technology. Different from the stacked threshold voltage supply topology of conventional cascode LNA, this cascode LNA is designed as two cascaded stages for low‐voltage application. For the purpose of lowering the whole power dissipation while RF performances are not influenced, the current occupation is reduced by decreasing the channel width of the second NMOS. The whole circuit is implemented through TSMC 0.18‐um CMOS technology. Measurement results show that it can get 10.7‐dB gain and 2.6 dB NF at frequency of 5.4 GHz. The IIP3 is about −2.3 dBm. The supply voltage is only 0.7 V, and the whole power dissipation is 6.3 mW. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:386–389, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25733
📜 SIMILAR VOLUMES
## Abstract A 30‐GHz (Ka‐band) low‐noise amplifier (LNA) with 10 mW power consumption (P~DC~) using standard 0.18‐μm CMOS technology was designed and implemented. To achieve sufficient gain, this LNA was composed of three cascade common‐source stages, and a series peaking inductor (L~g3~) was added
## Abstract A 20‐GHz CMOS low‐noise amplifier (LNA) fabricated with the 0.18 μm process is presented. This two‐stage cascaded common source LNA exhibits low power consumption with a satisfying performance such as overall gain and noise figure (NF). The measurement is performed on‐wafer. The 20‐GHz
## Abstract A Q‐band low‐noise amplifier (LNA) suitable for low‐voltage operation is presented in this paper.The amplifier uses a low‐voltage cascode structure in the first stage of the amplifier and was fabricated using a 0.13‐μm RF CMOS process with eight layers of copper metallization. Low‐volta
## Abstract A three‐stage 30‐GHz low noise amplifier (LNA) was designed and fabricated in a standard 0.18‐μm CMOS technology. The LNA has demonstrated a 10‐dB gain and a minimum noise figure of 5.2 dB at 30 GHz. The achieved input 1‐dB compression point (IP~1 dB~) and third order intercept point (I