A 5.79-dB NF, 30-GHz-band monolithic LNA with 10 mW power consumption in standard 0.18-μm CMOS technology
✍ Scribed by Chi-Chen Chen; Yo-Sheng Lin; Guo-Wei Huang; Shey-Shi Lu
- Publisher
- John Wiley and Sons
- Year
- 2009
- Tongue
- English
- Weight
- 382 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A 30‐GHz (Ka‐band) low‐noise amplifier (LNA) with 10 mW power consumption (P~DC~) using standard 0.18‐μm CMOS technology was designed and implemented. To achieve sufficient gain, this LNA was composed of three cascade common‐source stages, and a series peaking inductor (L~g3~) was added to the input terminal of the third stage to boost the peak gain (S~21‐max~) from 11.7 (at 28.8 GHz) to 14.5 (at 28 GHz), i.e., 23.9% (simulation). Shunt RC feedback was adopted in the third stage for achieving good output impedance matching. At 30 GHz, this LNA achieved excellent input return loss (S~11~) of −19.5 dB, output return loss (S~22~) of −23.8 dB, forward gain (S~21~) of 11.1 dB, reverse isolation (S~12~) of −49.2 dB, and noise figure of 5.79 dB. The corresponding gain/P~DC~ was 1.11, which is better than those of the CMOS LNAs around 30 GHz reported in the literature. The measured input‐referred 1‐dB compression point (P~1dB‐in~) and input third‐order intermodulation point (IIP3) were −10.9 and −2 dBm, respectively. © 2009 Wiley Periodicals, Inc. Microwave Opt Technol Lett 51: 933–937, 2009; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24250