𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A low-power 15-GHz frequency divider in a 0.8-μm silicon bipolar technology

✍ Scribed by Knapp, H.; Wilhelm, W.; Wurzer, M.

Book ID
114553659
Publisher
IEEE
Year
2000
Tongue
English
Weight
286 KB
Volume
48
Category
Article
ISSN
0018-9480

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A low-power 63-GHz CMOS direct injection
A low-power 63-GHz CMOS direct injection-locked frequency divider in 0.13-μm CMOS technology
✍ Wei-Lun Hsu; Chang-Zhi Chen; Yo-Sheng Lin 📂 Article 📅 2008 🏛 John Wiley and Sons 🌐 English ⚖ 564 KB

## Abstract A low‐power 63‐GHz (V‐band) direct injection‐locked frequency‐divider (ILFD) using standard 0.13‐μm CMOS technology is reported. To reduce power consumption and enhance locking range, a PMOS switch directly coupled to the LC tank (output) of the ILFD is used to replace the traditional t

A low power 20-GHz low-noise amplifier f
A low power 20-GHz low-noise amplifier fabricated using 0.18-μm CMOS technology
✍ J.-X. Liu; H.-C. Kuo; Y.-K. Chu; J.-F. Yeh; H.-R. Chuang 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 536 KB

## Abstract A 20‐GHz CMOS low‐noise amplifier (LNA) fabricated with the 0.18 μm process is presented. This two‐stage cascaded common source LNA exhibits low power consumption with a satisfying performance such as overall gain and noise figure (NF). The measurement is performed on‐wafer. The 20‐GHz