## Abstract A fully integrated dualโband lowโnoise amplifier (LNA) implemented in a standard 0.18โฮผm 1P6M CMOS process is presented in this paper. The LNA draws 12โmA current from a 1.5โV voltage supply and achieves power gains of 25 and 10 dB, and noise figures of 3.6 and 4 dB at 2.4 and 5.6 GHz r
โฆ LIBER โฆ
A 5.8 GHz Low Noise Amplifier for Wireless LAN Applications in Silicon Bipolar Technology
โ Scribed by Gerd Schuppener; Mehran Mokhtari; Boris Kerzar
- Book ID
- 110299308
- Publisher
- Springer
- Year
- 2001
- Tongue
- English
- Weight
- 111 KB
- Volume
- 27
- Category
- Article
- ISSN
- 0925-1030
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