𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Design of a 1.8 GHz low-noise amplifier for RF front-end in a 0.8 μm CMOS technology

✍ Scribed by Sungkyung Park; Wonchan Kim


Book ID
117871777
Publisher
IEEE
Year
2001
Tongue
English
Weight
432 KB
Volume
47
Category
Article
ISSN
0098-3063

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


A 1.2-V fully integrated 2.4-GHz low-noi
✍ C. C. Meng; M. H. Chiang; T. H. Wu 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 314 KB

## Abstract A 1.2‐V fully integrated 0.35‐μm inductively degenerated common source CMOS low‐noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high out

A K-band low-noise amplifier in 0.18-μm
✍ Jun-De Jin; Shawn S. H. Hsu 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 174 KB

## Abstract A K‐band low‐noise amplifier (LNA) was realized in a standard 0.18‐μm CMOS technology. The cascaded common‐source configuration of four stages was adopted for low voltage operation and high gain performance. In addition, the gate‐source transformer feedback technique was employed to ach