## Abstract The design and fabrication of a high‐efficiency inverse class‐F power amplifier using a 10‐W gallium nitride (GaN) high‐electron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for high‐efficiency operation. The measurement
A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier
✍ Scribed by Saad, Paul; Fager, Christian; Nemati, Hossein Mashad; Cao, Haiying; Zirath, Herbert; Andersson, Kristoffer
- Book ID
- 120397154
- Publisher
- Cambridge University Press
- Year
- 2010
- Tongue
- English
- Weight
- 389 KB
- Volume
- 2
- Category
- Article
- ISSN
- 1759-0787
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