A 1-GHz GaN HEMT based class-E power amp
β
Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong
π
Article
π
2008
π
John Wiley and Sons
π
English
β 369 KB
## Abstract This article reports a highly efficient 1βGHz classβE power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficien