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A GaN HEMT Class F Amplifier at 2 GHz With > 80% PAE

✍ Scribed by Schmelzer, D.; Long, S.I.


Book ID
117884428
Publisher
IEEE
Year
2007
Tongue
English
Weight
1022 KB
Volume
42
Category
Article
ISSN
0018-9200

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A 1-GHz GaN HEMT based class-E power amp
✍ Yong-Sub Lee; Mun-Woo Lee; Yoon-Ha Jeong πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 369 KB

## Abstract This article reports a highly efficient 1‐GHz class‐E power amplifier based on a GaN HEMT. The compensation elements with a series capacitor and a shunt inductor are used to compensate for the internal parasitic components of the packaged transistor. To improve output power and efficien