## Abstract The design and fabrication of a highโefficiency inverse classโF power amplifier using a 10โW gallium nitride (GaN) highโelectron mobility transistor at 1 GHz is presented. The output load network has been used to control harmonic components for highโefficiency operation. The measurement
A High-Efficiency GaN-Based Power Amplifier Employing Inverse Class-E Topology
โ Scribed by Yong-Sub Lee; Mun-Woo Lee; Sang-Ho Kam; Yoon-Ha Jeong
- Book ID
- 111642147
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 546 KB
- Volume
- 19
- Category
- Article
- ISSN
- 1531-1309
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