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Highly efficient LDMOS power amplifier based on class-E topology

✍ Scribed by Jongwoo Lee; Sungwoo Kim; Jungjin Nam; Jangheon Kim; Ildu Kim; Bumman Kim

Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 120 KB
Volume: 48
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.21476

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✦ Synopsis

Abstract

This paper describes a highly efficient class‐E power amplifier. The design has been carried out at 1 GHz using a LDMOS transistor with 10 W of peak envelope power (PEP). Drain efficiency of 76.1%, power‐added efficiency (PAE) of 73.6%, and gain of 14.8 dB are achieved at an output power of 39.1 dBm for a continuous wave (CW) signal. © 2006 Wiley Periodicals, Inc. Microwave Opt Technol Lett 48: 783–789, 2006; Pubished online in Wiley InterScience (www.interscience.wiley.com) DOI 10.1002/mop.21476

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