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A Hall coefficient investigation of ferromagnetic Ga1−xMnxAs layers on (100) GaAs substrates

✍ Scribed by I.T. Yoon; T.W. Kang; K.H. Kim; D.J. Kim

Book ID
108269253
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
162 KB
Volume
130
Category
Article
ISSN
0038-1098

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doped GaN layers, 2 mm thick metal organic chemical vapor deposition (MOCVD)-grown GaN templates on sapphire (0 0 0 1) substrates were prepared. The 2 mm GaN buffer layer exhibits ntype and a carrier concentration of 2.5 Â 10 17 cm À3 . The GaMnN films were produced at various Mn-cell temperatures r