A gas discharged based radiation source for EUV-lithography

✍ Scribed by R. Lebert; K. Bergmann; G. Schriever; W. Neff

• Book ID: 104306541
• Publisher: Elsevier Science
• Year: 1999
• Tongue: English
• Weight: 549 KB
• Volume: 46
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/s0167-9317(99)00034-9

✦ Synopsis

A new high repetitive, compact and low cost gas discharge based EUV ,,lamp" has been studied as an alternative to laser-produced plasmas as EUV sources. First results using oxygen in a fast discharge of electrically stored energy around 1 J lead to a conversion efficiency of about 0.1% for the emission at 13.0 nm which is suited for the use with Mo/Si-multilayer mirrors. Using Xenon a broadband emission in the investigated wavelength range from 10 nm to 18 nm is observed. With a first version a source with 40 W electrical input power could be demonstrated that emits about 50 mW/(4nsr) around 13 nm at a repetition rate of 150 Hz. No debris and no electrode erosion was observed after more than 107 pulses done up to now. Making use of the remaining optimisation potential this concept seems to be promising to fulfil the requirements of extremeultraviolet lithography