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A Detailed Investigation of the Growth Conditions of Gallium Nitride Nanorods by Hydride Vapor Phase Epitaxy

โœ Scribed by Shin, Min Jeong; Kim, Min Ji; Jeon, Hun Soo; Ahn, Hyung Soo; Yi, Sam Nyung; Huh, Yoon; Yu, Young-Moon; Sawaki, Nobuhiko


Book ID
120345255
Publisher
Institute of Pure and Applied Physics
Year
2012
Tongue
English
Weight
685 KB
Volume
51
Category
Article
ISSN
0021-4922

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Flow Modulation Growth of Thick GaN by H
โœ Zhang, W. ;Riemann, T. ;Alves, H.R. ;Heuken, M. ;Veit, P. ;Pfisterer, D. ;Hofman ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 99 KB ๐Ÿ‘ 2 views

We demonstrate in this work the effects of flow modulation on the crystalline quality and morphology of GaN epilayers grown by hydride vapor phase epitaxy. The improvement in the structural qualtiy is attributed to the strain relaxation, dislocations suppression and enhanced Ga diffusion.