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Growth of GaInAs/InP by the vapor phase epitaxy hydride method

โœ Scribed by F. Lassalle; A. Porte; J.L. Laporte; C. Pariset; M. Cadoret

Book ID
113187706
Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
539 KB
Volume
23
Category
Article
ISSN
0025-5408

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GaInAs/InP quantum wires grown by metalo
GaInAs/InP quantum wires grown by metalorganic vapor phase epitaxy on V-grooved InP substrates
โœ M. Geiger; F. Adler; U.A. Griesinger; H. Schweizer; F. Scholz ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 414 KB

A single nominally lattice matched GalnAs quantum well (QW)/quantum wire (QWR) structure was grown by metalorganic vapor phase epitaxy (MOVPE) in Vgrooved lnP substrates. Different SiO2 etch masks with opening widths from 2/tin down to 200 nm (for application as second order DFB grating) were define