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A Conductive AFM Nanoscale Analysis of NBTI and Channel Hot-Carrier Degradation in MOSFETs

โœ Scribed by Wu, Qian; Bayerl, Albin; Porti, Marc; Martin-Martinez, Javier; Lanza, Mario; Rodriguez, Rosana; Velayudhan, Vikas; Nafria, Montserrat; Aymerich, Xavier; Gonzalez, Mireia Bargallo; Simoen, Eddy

Book ID
126778525
Publisher
IEEE
Year
2014
Tongue
English
Weight
874 KB
Volume
61
Category
Article
ISSN
0018-9383

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Hot-carrier reliability study of second
Hot-carrier reliability study of second and first impact ionization degradation in 0.15-ฮผm channel-length N-MOSFETS
โœ A. Bravaix; D. Goguenheim; N. Revil; E. Vincent ๐Ÿ“‚ Article ๐Ÿ“… 2001 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 232 KB

The hot-carrier degradation induced by first-and second-impact ionization events is compared in advanced N-MOSFETs used for digital applications with a 3.2-nm gate-oxide thickness. Results show that the substrate enhanced electron injection (SEEI) mechanism is still increased in 0.15-mm channel leng