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Analytical analysis of nanoscale fully depleted Double-Gate MOSFETs including the hot-carrier degradation effects

✍ Scribed by Ghoggali, Z.; Djeffal, F.


Book ID
121471867
Publisher
Taylor and Francis Group
Year
2010
Tongue
English
Weight
408 KB
Volume
97
Category
Article
ISSN
0020-7217

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As the channel length rapidly shrinks down to the nanoscale regime, the multiple gate MOSFETs structures have been considered as potential candidates for a CMOS device scaling due to its good short-channel-effects (SCEs) immunity. Therefore, in this work we investigate the scaling capability of Doub