Analytical analysis of nanoscale multipl
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F. Djeffal; Z. Ghoggali; Z. Dibi; N. Lakhdar
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Article
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2009
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Elsevier Science
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English
β 440 KB
As the channel length rapidly shrinks down to the nanoscale regime, the multiple gate MOSFETs structures have been considered as potential candidates for a CMOS device scaling due to its good short-channel-effects (SCEs) immunity. Therefore, in this work we investigate the scaling capability of Doub