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A comprehensive study on p+ polysilicon-gate MOSFET's instability with fluorine incorporation

✍ Scribed by Sung, J.J.; Lu, C.-Y.

Book ID: 114536973
Publisher: IEEE
Year: 1990
Tongue: English
Weight: 963 KB
Volume: 37
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.62294

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