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The Impact of Nitrogen Engineering in Silicon Oxynitride Gate Dielectric on Negative-Bias Temperature Instability of p-MOSFETs: A Study by Ultrafast On-The-Fly Technique
✍ Scribed by Maheta, V.D.; Olsen, C.; Ahmed, K.; Souvik Mahapatra
- Book ID
- 114619431
- Publisher
- IEEE
- Year
- 2008
- Tongue
- English
- Weight
- 473 KB
- Volume
- 55
- Category
- Article
- ISSN
- 0018-9383
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