𝔖 Bobbio Scriptorium
✦   LIBER   ✦

A comprehensive study of defect production and annealing in ion implanted InP

✍ Scribed by M. Slater; S. Kostic; M.J. Nobes; G. Carter


Book ID
113277298
Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
413 KB
Volume
7-8
Category
Article
ISSN
0168-583X

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πŸ“œ SIMILAR VOLUMES


Defect production and annealing in ion i
✍ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch πŸ“‚ Article πŸ“… 1995 πŸ› Elsevier Science 🌐 English βš– 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron