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Defect production, annealing and electrical activation in Si+ implanted InP

✍ Scribed by E. Wendler; P. Müller; T. Bachmann; W. Wesch


Book ID
113284760
Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
361 KB
Volume
80-81
Category
Article
ISSN
0168-583X

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Defect production and annealing in ion i
✍ A. Heft; E. Wendler; T. Bachmann; E. Glaser; W. Wesch 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 375 KB

In the present study we investigated damage production and annealing in 6H SiC wafers implanted with 230 keV Ga + ions in a wide dose range at various temperatures. Analysis of the implanted layers was performed by the Rutherford backscattering (RBS) channeling technique and by transmission electron