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Dopant distribution and electrical activation of Si implanted GaAs by short time annealing

✍ Scribed by D. Panknin; E. Wieser; R. Grötzschel; C.E. Richter; M. Gericke; Ya.V. Fattachov; I.B. Khaibullin

No coin nor oath required. For personal study only.

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