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Electrical properties of ion implanted and short time annealed polycrystalline silicon

✍ Scribed by Voelskow, M. ;Mattthäi, J. ;Klabes, R.

Book ID
105378086
Publisher
John Wiley and Sons
Year
1984
Tongue
English
Weight
537 KB
Volume
86
Category
Article
ISSN
0031-8965

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Polycrystalline silicon layers of grains with an average diameter of 100 nm and with a thickness of 500 nm grown on an amorphous SiO2 layer are implanted with a dose of 4 x 10 is cm-2 boron ions at an ion energy of 25 keV and subsequently annealed up to maxima of 950°C and/or 300 s with a scanned an