𝔖 Bobbio Scriptorium

✦ LIBER ✦

A comparison of In0.5Ga0.5P/GaAs:C single and double-heterojunction bipolar transistors grown by LP-MOCVD

✍ Scribed by Hanson, A.W.; Stockman, S.A.; Stillman, G.E.

Book ID: 114534911
Publisher: IEEE
Year: 1992
Tongue: English
Weight: 267 KB
Volume: 39
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.163517

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Comparison of In/sub 0.5/Ga/sub 0.5/P/Ga

Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base

✍ A. Hanson; S. Stockman; G. Stillman 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 375 KB

Characteristics of In0.53Ga0.47As/InP do

Characteristics of In0.53Ga0.47As/InP double and single heterostructure-emitter bipolar transistors grown by LP-MOCVD

✍ Y.H. Wu; J.S. Su; W.C. Hsu; W.C. Liu; W. Lin 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 264 KB

GaAs bipolar transistors with a Ga0.5In0

GaAs bipolar transistors with a Ga0.5In0.5P hole barrier layer and carbon-doped base grown by MOVPE

✍ Lauterbach, T.; Pletschen, W.; Bachem, K.H. 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 436 KB

Growth and characterization of high-qual

Growth and characterization of high-quality InP/Ga0.25In0.75As0.5P0.5 and InP/Ga0.17In0.83As0.35P0.65 grown by the LP-MOCVD technique : M. Defour, F. Ohmes, P. Maurel and M. Razeghi. Revue tech. Thomson-CSF, 20–21(3), 387 (1989) (in French)

📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 130 KB

A comparative study of metamorphic InP/I

A comparative study of metamorphic InP/InGaAs double heterojunction bipolar transistors with InP and InAIP buffer layers grown by molecular beam epitaxy

✍ Yongkun Sin; Nathan Presser; Paul Adams 📂 Article 📅 2006 🏛 Springer US 🌐 English ⚖ 271 KB

[IEEE Conference Proceedings. 2001 Inter

[IEEE Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM - Nara, Japan (14-18 May 2001)] Conference Proceedings. 2001 International Conference on Indium Phosphide and Related Materials. 13th IPRM (Cat. No.01CH37198) - A comparison of deep level effects on the DC characteristics of In/sub x/Ga/sub 1-x/P/In/sub 0.20/Ga/sub 0.80/As/GaAs and Al/sub 0.24/Ga/sub 0.76/As/In/sub 0.20/Ga/sub 0.80/As/GaAs high electron mobility transistors grown by solid source MBE

✍ Yoon, S.F.; Yip, K.H.; Zheng, H.Q.; Gay, B.P. 📂 Article 📅 2001 🏛 IEEE ⚖ 392 KB