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Comparison of In/sub 0.5/Ga/sub 0.5/P/GaAs single- and double-heterojunction bipolar transistors with a carbon-doped base

✍ Scribed by A. Hanson; S. Stockman; G. Stillman

Book ID: 126743084
Publisher: IEEE
Year: 1993
Tongue: English
Weight: 375 KB
Volume: 14
Category: Article
ISSN: 0741-3106
DOI: 10.1109/55.215089

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