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A comparative study of dopant activation in boron, BF2, arsenic, and phosphorus implanted silicon

✍ Scribed by Mokhberi, A.; Griffin, P.B.; Plummer, J.D.; Paton, E.; McCoy, S.; Elliott, K.

Book ID: 114616768
Publisher: IEEE
Year: 2002
Tongue: English
Weight: 314 KB
Volume: 49
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2002.1013274

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