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Activation and dopant sites of ultra-shallow implanted boron and arsenic in silicon

✍ Scribed by H. Kobayashi; I. Nomachi; S. Kusanagi; F. Nishiyama

Book ID: 114165498
Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 579 KB
Volume: 190
Category: Article
ISSN: 0168-583X
DOI: 10.1016/s0168-583x(01)01227-7

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