## Abstract A dual‐band three‐mode low‐noise amplifier was demonstrated by using 0.35‐μm SiGe BiCMOS technology. For dual‐band applications, a band switching matching network controlled by MOSFET switches was introduced. Through setting On/off of two MOSFET switches, the proper matching networks we
A compact 2.4/5.2-GHz CMOS dual-band low-noise amplifier
✍ Scribed by Liang-Hung Lu; Hsieh-Hung Hsieh; Yu-Shun Wang
- Book ID
- 118217650
- Publisher
- IEEE
- Year
- 2005
- Tongue
- English
- Weight
- 333 KB
- Volume
- 15
- Category
- Article
- ISSN
- 1531-1309
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