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A chemical kinetics model for a mixed-abrasive chemical mechanical polishing

✍ Scribed by Ping Hsun Chen; Bing Wei Huang; Han Chang Shih

Book ID
108287764
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
199 KB
Volume
483
Category
Article
ISSN
0040-6090

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So far there is no consensus on the fundamental mechanism of material removal in chemical-mechanical polishing (CMP). Some researchers model the CMP process based on the mechanism proposed by Kaufman et al. [1], who attribute the material removal from the wafer surface to chemistry-aided mechanical