A chemical-mechanical polish for tungsten
β Scribed by C. Newton; D.L. Olson
- Publisher
- Elsevier Science
- Year
- 1968
- Weight
- 198 KB
- Volume
- 1
- Category
- Article
- ISSN
- 0026-0800
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Electrochemistry of Chemical Vapor Deposited Tungsten Films with Relevance to Chemical Mechanical Polishing. -The passivation and etching behavior of CVD tungsten films under acidic conditions relevant to chemical mechanical polishing is studied by electrochemical and XPS methods. According to dc p
So far there is no consensus on the fundamental mechanism of material removal in chemical-mechanical polishing (CMP). Some researchers model the CMP process based on the mechanism proposed by Kaufman et al. [1], who attribute the material removal from the wafer surface to chemistry-aided mechanical