A systematic study of Cu chemical-mechanical polishing (CMP) in terms of process parameters influence, planarization ability of the process and pattern sensitivity of the polish rate was performed. We examined the effects of Cu dishing and SiO z thinning and the reasons for them. Both were found to
β¦ LIBER β¦
A dishing model for chemical mechanical polishing of metal interconnect structures
β Scribed by Shih-Hsiang Chang
- Book ID
- 108207374
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 329 KB
- Volume
- 77
- Category
- Article
- ISSN
- 0167-9317
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