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XRD measurement of thermal strain in InSb-based devices

✍ Scribed by Declémy, A. ;Renault, P. O.

Book ID
105364168
Publisher
John Wiley and Sons
Year
2007
Tongue
English
Weight
540 KB
Volume
204
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

The low temperature‐induced strain in the thin brittle InSb upper part of ready‐to‐work InSb‐based infrar‐ed photo‐detectors (Hybrid Focal Plane Arrays (HFPA) technology) has been measured using X‐ray diffraction (XRD). Assuming no shear component and no surface normal stress in the InSb upper part of the device and using linear elasticity laws lead to simple strain‐stress relations. It was shown that the maximum value of the thermal stress in the InSb part of the studied samples is well under the value of the yield stress of InSb at the working temperature of the devices. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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