At various stages of in situ therm31 oxiclztion of Si(lll) monocrystals, X-ray photoelectron spectroscopy (XPS or ESCA) t-eve& a shift in the silicon core-level binding energies which vties continuously from 2.4 to 4.2 eV. From the oxygen &d silicon ESCA peak intensities, these films un be said to h
β¦ LIBER β¦
X-ray photoelectron spectroscopy study of chlorine incorporation in thermally grown HCl oxides on silicon
β Scribed by A.S. Vengurlekar; A.N. Chandorkar; K.V. Ramanathan
- Publisher
- Elsevier Science
- Year
- 1984
- Tongue
- English
- Weight
- 373 KB
- Volume
- 114
- Category
- Article
- ISSN
- 0040-6090
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
X-ray photoelectron spectroscopy of ther
β
G. Hollinger; Y. Jugnet; P. Pertosa; Tran Minh Duc
π
Article
π
1975
π
Elsevier Science
π
English
β 426 KB
X-ray photoelectron spectroscopy study o
β
J. Jouve; Y. Belkacem; C. Severac
π
Article
π
1986
π
Elsevier Science
π
English
β 544 KB
X-ray photoelectron spectroscopy and Rut
β
N. Magnussen; L. Quinones; D.L. Cocke; E.A. Schweikert; B.K. Patnaik; C.V.Barros
π
Article
π
1988
π
Elsevier Science
π
English
β 629 KB
Uncertainty in measurement of overlayer
β
Th. Gross; A. Lippitz; W. Unger; B. GΓΌttler
π
Article
π
2000
π
John Wiley and Sons
π
English
β 74 KB
Overlayers of SiO 2 (nominally 4, 6 and 8 nm thick) on silicon, prepared by thermal oxidation, were investigated using x-ray photoelectron spectroscopy (XPS). The thickness of these overlayers was obtained from a measurement of the photoelectron intensities originating from the substrate and the oxi